A Low-Gm Programmable Transconductor Based on FVF Architecture in 180 nm CMOS Process

Authors

  • O. J. Cinco Izquierdo TecNM/ITJMMPH-Zapopan Author
  • J. J. Ocampo Hidalgo Electronics Department, Universidad Autónoma de México, México City, México. Author
  • C. A. de la Cruz Blas Department of Electrical and Electronic Engineering, Universidad Pública de Navarra, Pamplona, España. Author
  • F. Montalvo Galicia Faculty of Basic Sciences, Engineering and Technology, Universidad Autónoma de Tlaxcala, Tlaxcala, México. Author
  • M. T. Sanz Pascual Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE) Tonantzintla, Puebla, México. Author

DOI:

https://doi.org/10.66326/vfr88e53

Keywords:

A Low-Gm Programmable Transconductor Based on FVF Architecture in 180 nm CMOS Process

Abstract

This paper presents the design and simulation of a programmable low-transconductance (Gm) operational transconductance amplifier (OTA) suitable for integrated analog filters. The proposed architecture is based on a Flipped Voltage Follower (FVF) core with a source degeneration path implemented using a voltage-controlled MOS pseudo-resistor. This configuration enables wide tunability of the transconductance while maintaining low power consumption and compact area. Designed in a 0.18 μm CMOS process and operating at a 1.8 V supply, the OTA achieves a tunable Gm range from 3.25 nS to 25 nS with a power consumption of only 9 μW. The circuit exhibits a bandwidth of 560 kHz and a total harmonic distortion

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Published

2026-09-24

How to Cite

A Low-Gm Programmable Transconductor Based on FVF Architecture in 180 nm CMOS Process. (2026). Scientia Tecnológica, 3(4). https://doi.org/10.66326/vfr88e53